Search results for "Equivalent oxide thickness"

showing 3 items of 3 documents

Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics

2010

Atomic layer deposition (ALD) of ZrO 2 ―Gd 2 O 3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO 2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd 2 O 3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd 2 O 3 content above 3.4 cat. % resulted in the decreased permittivity…

010302 applied physicsPermittivityMaterials scienceRenewable Energy Sustainability and the EnvironmentAnalytical chemistryEquivalent oxide thickness02 engineering and technologyDielectric021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAtomic layer depositionElectric field0103 physical sciencesMaterials ChemistryElectrochemistry0210 nano-technologyCurrent densityLeakage (electronics)High-κ dielectricJournal of The Electrochemical Society
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Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films

2010

ZrO 2 films doped with Er 2 O 3 were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350°C. The erbium content was 1―5 cation %. The films were uniform in thickness. The ZrO 2 :Er 2 O 3 films were crystallized already in the as-deposited state. Upon annealing at 650°C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO 2 . Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO 2 :Er 2 O 3 films could reach 31. The capacitors based on the doped ZrO 2 possessed l…

Materials scienceAnnealing (metallurgy)Inorganic chemistryOxideAnalytical chemistrychemistry.chemical_elementEquivalent oxide thickness02 engineering and technology01 natural scienceslaw.inventionErbiumchemistry.chemical_compoundAtomic layer depositionlaw0103 physical sciencesMaterials ChemistryElectrochemistryThin filmCrystallization010302 applied physicsRenewable Energy Sustainability and the EnvironmentDoping021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry0210 nano-technologyJournal of The Electrochemical Society
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Investigation on passivity of titanium under steady-state conditions in acidic solutions

2011

Abstract The passivity of titanium was studied using potentiostatic polarization combined with Mott–Schottky analysis in acidic solutions. The oxide layer was characterized as an n-type semiconducting, oxygen deficient oxide (TiO1.993–1.996) with a donor density in the range of 1019–1020 cm−3 depending on electrode potential and electrolyte pH. The calculated thickness for the inner oxide layer was in the range of 1–4 nm, increasing linearly with applied potential and exponentially with electrolyte pH. The potential- and pH-dependence of the inner oxide thickness was interpreted by a modified point defect model for the migration-controlled oxide growth, in which the rate-determining step in…

Materials sciencePassivityInorganic chemistryOxidechemistry.chemical_elementEquivalent oxide thicknessElectrolyteCondensed Matter Physicschemistry.chemical_compoundchemistryLattice (order)General Materials SciencePolarization (electrochemistry)Electrode potentialTitaniumMaterials Chemistry and Physics
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